Surface, interfaces, thin films

Creation and photoelectric properties of Ox/$p$-InAs heterostructures

V. Yu. Rud'^a, Yu. V. Rud'^b, E. I. Terukov^b, T. N. Ushakova^b, M. C. Seginov<sup>c

a</sup> St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg
^c Turkmenien State University,

Abstract: For the first time, heterostructures represented by the contact of a thin film of indium-arsenide intrinsic oxide Ox with an InAs wafer are obtained by the surface thermal interaction of indium arsenide with the normal Earth air atmosphere. The first I–V characteristics and spectral dependences of the photosensetivity of Ox/$p$-InAs heterostructures are investigated. For the first time, the rectification is revealed for these heterostructures, and the spectral dependences of the photosensivity are analyzed. A conclusion concerning the possibility of using the new technology for fabricating broadband optical Ox/$p$-InAs-based photodetectors is advanced.

Received: 22.03.2012
Accepted: 02.04.2012

 English version: Semiconductors, 2012, 46:10, 1270–1273

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