This article is cited in 20 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Rashba spin splitting and exchange enhancement of the $g$ factor in InAs/AlSb heterostructures with a two-dimensional electron gas

S. S. Krishtopenko^a, K. P. Kalinin^a, V. I. Gavrilenko^a, Yu. G. Sadof'ev^b, M. Goiran<sup>c

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^c Laboratoire National des Champs Magnétiques Intenses (LNCMI-T), CNRS UPR 3238 Université de Toulouse, 31400 Toulouse, France

Abstract: The exchange enhancement of the $g$ factor of quasiparticles in InAs/AlSb heterostructures with a two-dimensional electron gas exhibiting Rashba spin splitting is investigated using the 8-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian. It is shown that, in low magnetic fields, Rashba spin splitting yields a profound increase in the amplitude of oscillations of the quasiparticle $g$ factor renormalized by exchange interaction. From analysis of Shubnikov–de Haas oscillations at the temperature 250 mK, the energy of Rashba splitting and the $g$ factor of quasiparticles are determined. The values determined experimentally are in good agreement with the results of theoretical calculations carried out with consideration for the asymmetric built-in electric field in InAs/AlSb heterostructures.

Received: 15.02.2012
Accepted: 28.02.2012

 English version: Semiconductors, 2012, 46:9, 1163–1170

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