Semiconductor structures, low-dimensional systems, quantum phenomena

Refined model for the current-voltage characteristics of quantum-well infrared photodetectors

V. B. Kulikov

Joint Stock Company "Central Research Institute "Cyclone", Moscow

Abstract: The temperature dependences of the dark current of quantum-well infrared photodetectors are investigated experimentally. It is established that the pre-exponential factor in the analytical expression for the photodetector current-voltage characteristics varies linearly with temperature. On the basis of the results obtained, it is suggested that the temperature dependence of the photodetector’s dark current is determined by the thermal excitation of charge carriers to a band characterized by a two-dimensional density of states. In the context of this suggestion, a refined model for the current-voltage characteristics is proposed. The model takes into account the thermal generation of charge carriers in a band with a two-dimensional density of states and the electric field dependence of the thermal activation energy for the quantum-well ground state and of the drift velocity of the carriers in the barrier conduction band.

Received: 01.02.2012
Accepted: 14.02.2012

 English version: Semiconductors, 2012, 46:9, 1158–1162

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