This article is cited in 18 papers

Surface, interfaces, thin films

Electrical properties of anisotype heterojunctions $n$-CdZnO/$p$-CdTe

V. V. Brus^a, M. I. Ilashschuk^b, V. V. Khomyak^b, Z. D. Kovalyuk^a, P. D. Mar'yanchuk^b, K. S. Ulyanytsky<sup>b

a</sup> Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsi Department, 58001, Chernivtsi, Ukraine
^b Chernivtsi National University named after Yuriy Fedkovych

Abstract: Anisotype surface-barrier $n$-Cd$_{0.5}$Zn$_{0.5}$O/$p$-CdTe heterojunctions are fabricated by the high-frequency sputtering of a Cd$_{0.5}$Zn$_{0.5}$O alloy film onto a freshly cleaved single-crystal CdTe surface. The main electrical properties of the heterojunctions are studied and the dominant mechanisms of charge transport are established, namely, the multistage tunnel-recombination mechanism under forward bias, Frenkel–Pool emission, and tunneling under forward bias. The influence of the surface electrically active states at the heterojunction interface is analyzed and their surface concentration is evaluated: $N_{ss}\sim$ 10$^{14}$ cm$^{-2}$.

Received: 13.02.2012
Accepted: 28.02.2012

 English version: Semiconductors, 2012, 46:9, 1152–1157

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