RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2012 Volume 46, Issue 8, Pages 1082–1087 (Mi phts8310)

This article is cited in 4 papers

Semiconductor physics

N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes

K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova

Daghestan Institute of Physics after Amirkhanov

Abstract: The dc current-voltage characteristics of microwave diodes are experimentally studied on simultaneous exposure of the diodes to a high-frequency (100 MHz) high-amplitude harmonic signal. In the current-voltage characteristics of the microwave diodes, regions of N-type negative differential resistance, hysteresis, and current oscillations are observed depending on the amplitude and frequency of the high-frequency signal. A comparative analysis of the experimentally observed effects is performed, and possible mechanisms for the effects are discussed.

Received: 13.12.2011
Accepted: 30.12.2011


 English version:
Semiconductors, 2012, 46:8, 1059–1065

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026