This article is cited in 18 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells

V. V. Chaldyshev^a, E. V. Kundelev^b, E. V. Nikitina^c, A. Yu. Egorov^c, A. A. Gorbatsevich<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)

Abstract: The optical reflection spectra of periodic structures with two quantum wells in the unit cell are investigated. The dependences of the features of Bragg reflection and exciton-polariton reflection on the angle of incidence and polarization of light and the sample temperature are studied. Analysis of the experimental data shows that a 60-period structure acts as a distributed Bragg reflector with a peak reflectivity exceeding 90% and a spectral band width as large as 16 meV.

Received: 28.02.2012
Accepted: 07.03.2012

 English version: Semiconductors, 2012, 46:8, 1016–1019

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