This article is cited in 17 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

On the impedance spectroscopy of structures with a potential barrier

V. V. Brus

Institute for Materials Science Problems, National Academy of Sciences of Ukraine, Chernovtsy Branch, Chernovtsy, 58001, Ukraine

Abstract: A detailed analysis of the spectral dependences of the real and imaginary components of the measured impedance of a simulated silicon $p$–$n$ junction is carried out within the framework of a conventional equivalent circuit (parallel $R_dC_b$ chain and series resistance $R_s$). A simple technique was proposed for determining the true value of the barrier capacitance of structures with a potential barrier (without surface electrically active states) on the basis of analysis of the spectral dependence for the imaginary part of the measured impedance.

Received: 11.01.2012
Accepted: 15.01.2012

 English version: Semiconductors, 2012, 46:8, 1012–1015

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