This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of a transverse electric field on charge carrier mobility in nanowires

È. P. Sinyavskii^a, S. A. Karapetyan<sup>b

a</sup> Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
^b Shevchenko Transnistria State University

Abstract: For nanowires with a parabolic potential, the effect of an electric field $\mathbf{E}$, orthogonal to the system’s axis on the mobility of charge carriers $\mu$ is investigated. With consideration for the interaction of charge carriers with a rough surface, it is shown that, for a nondegenerate electron (hole) gas, the mobility $\mu$ decreases with increasing $E$. For a degenerate electron (hole) gas, the dependence of $\mu$ on $\mathbf{E}$, is described by a nonmonotonic oscillating function. A physical interpretation of the predicted effect is proposed.

Received: 26.12.2011
Accepted: 18.01.2012

 English version: Semiconductors, 2012, 46:8, 1008–1011

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