This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures

V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich

Siberian Physical-Technical Institute of the Tomsk State University

Abstract: The influence of oxygen plasma and thermal annealing at 900$^\circ$C on the capacitance-voltage and conductivity-voltage characteristics of $n$-GaAs-(anodic oxide)-metal structures is studied. In contrast to the unannealed structures, high-temperature annealing in Ar for 30 min leads to the emergence of a voltage dependence of the capacitance $(C)$ and conductivity $(G)$. The influence of oxygen plasma on a Ga$_2$O$_3$ film before annealing promotes additional variation in the capacitance-voltage and conductivity-voltage characteristics.

Received: 11.01.2012
Accepted: 18.01.2012

 English version: Semiconductors, 2012, 46:8, 1003–1007

Bibliographic databases:

•