E. A. Shevchenko, V. N. Zhmerik, A. M. Mizerov, A. A. Sitnikova, S. V. Ivanov, A. A. Toropov, “Quantum-confined stark effect and localization of charge carriers in Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.4}$Ga$_{0.6}$N quantum wells with different morphologies”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8,Pages 1022

This article is cited in 6 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Quantum-confined stark effect and localization of charge carriers in Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.4}$Ga$_{0.6}$N quantum wells with different morphologies

E. A. Shevchenko, V. N. Zhmerik, A. M. Mizerov, A. A. Sitnikova, S. V. Ivanov, A. A. Toropov

Ioffe Institute, St. Petersburg

Abstract: The electric fields in Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.4}$Ga$_{0.6}$N quantum wells are estimated. The quantum wells are grown by plasma-assisted molecular-beam epitaxy with plasma activation of nitrogen. The three-dimensional and planar modes of buffer layer growth are used. The transition to the three-dimensional mode of growth yields a substantial increase in the photoluminescence intensity of the quantum wells and a shift of the photoluminescence line to shorter wavelengths. These effects are attributed to the fact that, because of the extra three-dimensional localization of charge carriers in the quantum-well layer, the quantum-confined Stark effect relaxes. The effect of localization is supposedly due to spontaneous composition fluctuations formed in the AlGaN alloy and enhanced by the three-dimensional growth.

Received: 30.01.2012
Accepted: 02.02.2012