This article is cited in 4 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Solubility of sulfur in silicon

V. B. Shuman, A. A. Makhova, Yu. A. Astrov, A. M. Ivanov, A. N. Lodygin

Ioffe Institute, St. Petersburg

Abstract: The available published experimental data on the maximum possible concentration of sulfur dissolved in silicon as a function of temperature are analyzed. The authors’ recent results demonstrate that the amount of sulfur dissolved in silicon crystals is approximately two times the reference values, which is in agreement with the data given by a number of other studies.

Received: 14.02.2012
Accepted: 15.02.2012

 English version: Semiconductors, 2012, 46:8, 969–970

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