V. Ya. Aleshkin, A. A. Dubinov, L. V. Gavrilenko, Z. F. Krasil'nik, D. I. Kuritsyn, D. I. Kryzhkov, S. V. Morozov, “Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 7,Pages <nobr>940

This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

V. Ya. Aleshkin^a, A. A. Dubinov^a, L. V. Gavrilenko^a, Z. F. Krasil'nik^a, D. I. Kuritsyn^a, D. I. Kryzhkov, S. V. Morozov^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The results of experimental studies of the subpicosecond relaxation dynamics of photoexcited charge carriers in an In$_{0.22}$Ga$_{0.78}$As/GaAs quantum-well heterostructure are reported. From photoluminescence studies of the structure by the upconversion technique, the cooling rate of charge carriers in the quantum well and the time of charge-carrier trapping into the well are estimated to be $\sim$1 ps at 300 K and at $\sim$6.5 ps at 10 K.

Received: 26.12.2011
Accepted: 27.12.2011