This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

On the possibility of the experimental determination of spontaneous polarization for silicon carbide polytypes

S. Yu. Davydov^a, A. A. Lebedev^a, O. V. Posrednik<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: A NH-SiC/3C-SiC heterojunction and a heterostructure of the NH-SiC/3C-SiC/NH-SiC type ($N$ = 2, 4, 6, 8), fabricated from silicon carbide polytypes, are considered. Two possibilities are analyzed for the heterojunctions, in which a Si or a C plane is the contact plane of the NH polytype. In this case, the energies of quasi-local levels in the quantum wells at the interface will be different. With the difference of these energies measured, it is possible to determine the spontaneous polarization $P_{\mathrm{sp}}$ inherent in the NH polytype. In the presence of a spontaneous polarization field, the quasi-local levels in the left- and right-hand quantum wells of the heterostructure have different energies. It is shown that, if the heterostructure is placed in an external electric field, it is possible to determine the magnitude of the spontaneous polarization by calculating the difference between the energies of these levels. Experimental ways to find $P_{\mathrm{sp}}$ by using the suggested theoretical scenario are discussed.

Received: 19.10.2011
Accepted: 26.12.2011

 English version: Semiconductors, 2012, 46:7, 913–916

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