Electronic properties of semiconductors

Evidence of the third $(A^+)$ level of the mercury vacancy in Cd$_x$Hg$_{1-x}$Te

S. G. Gassan-zade, M. V. Strikha, G. A. Shepel'skii

Institute of Semiconductor Physics NAS, Kiev

Abstract: The existence of a previously unknown shallow acceptor level (depth of $\sim$1 meV), which belongs to the intrinsic defect of the semiconductor crystal rather than to the impurity, is found for Cd$_x$Hg$_{1-x}$Te compounds. It is concluded from analysis of the experimental data that this state is the third level of the mercury vacancy $V_{\mathrm{Hg}}$, which emerges due to the capture of an additional hole (state $A^+$).

Received: 15.11.2011
Accepted: 21.11.2011

 English version: Semiconductors, 2012, 46:7, 882–886

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