This article is cited in 8 papers

Electronic properties of semiconductors

Diamagnetic exciton polariton in the interband magnetooptics of semiconductors

R. P. Seisyan, G. M. Savchenko, N. S. Averkiev

Ioffe Institute, St. Petersburg

Abstract: The experimentally observed magnetic-field dependence of the integrated absorption coefficient in Al$_{0.15}$Ga$_{0.85}$As samples at 1.7 K is interpreted. It is established that the dependence results from the competition of two mechanisms: an increase in integrated absorption due to an increase in the oscillator strength as a result of magnetic-field-induced compression of the exciton wave function and a decrease associated with the magnetic freezing-out of charged scattering centers. An analysis of the integrated absorption shows that diamagnetic exciton polaritons are formed in the samples in a magnetic field.

Received: 27.12.2011
Accepted: 30.12.2011

 English version: Semiconductors, 2012, 46:7, 873–877

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