This article is cited in 9 papers

Electronic properties of semiconductors

Role of intrinsic defects in splitting the energy spectra of charge carriers in Ag$_2$Te

M. B. Dzhafarov^a, F. F. Aliev^b, R. A. Gasanova^b, A. A. Saddinova<sup>b

a</sup> Azerbaijan State Agricultural University, Ganja
^b Institute of Physics Azerbaijan Academy of Sciences

Abstract: The energy gap and its temperature coefficient are calculated depending on the concentration of defects in silver telluride with a Te and Ag excess. On the basis of the obtained data, the correlation between the charge-carrier energy spectrum and the silver-telluride defectness is analyzed. It is established that the correlation is a reflection of more general fundamental relations between the energy structure and the defect concentration in Ag$_2$Te caused by ions and vacancies of silver atoms in the sublattice.

Received: 30.11.2011
Accepted: 07.12.2011

 English version: Semiconductors, 2012, 46:7, 861–865

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