N. V. Sibirev, M. Tchernycheva, G. È. Cirlin, G. Patriarche, J. C. Harmand, V. G. Dubrovskii, “Effect of diffusion from a lateral surface on the rate of gan nanowire growth”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 6,Pages <nobr>857

This article is cited in 10 papers

Manufacturing, processing, testing of materials and structures

Effect of diffusion from a lateral surface on the rate of gan nanowire growth

N. V. Sibirev^ab, M. Tchernycheva^acd, G. È. Cirlin^abef, G. Patriarche^d, J. C. Harmand^d, V. G. Dubrovskii^abf

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Saint Petersburg State University
^c Institute d’Electronique Fondamentale, Universite Paris-Sud F91405 Orsay, France
^d CNRS-LPN, Route de Nozay, 91460 Marcoussis, France
^e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^f Ioffe Institute, St. Petersburg

Abstract: The kinetics of the growth of GaN crystalline nanowires on a Si (111) surface with no catalyst is studied experimentally and theoretically. Noncatalytic GaN nanowires were grown by molecular-beam epitaxy with AlN inserts, which makes it possible to determine the rate of the vertical growth of nanowires. A model for the formation of GaN nanowires is developed, and an expression for their rate of growth is derived. It is shown that, in the general case, the dependence of the rate of growth on the nanowire diameter has a minimum. The diameter corresponding to the experimentally observed minimum of the rate of growth steadily increases with increasing diffusion flux from the lateral surface.

Received: 21.11.2011
Accepted: 28.11.2011