This article is cited in 18 papers

Manufacturing, processing, testing of materials and structures

Effect of the temperature during deposition of AlO$_x$ films by spray pyrolysis on their passivating properties in a silicon solar cell

G. G. Untila^a, T. N. Kost^a, A. B. Chebotareva^a, M. B. Zaks^b, A. M. Sitnikov^b, O. I. Solodukha<sup>b

a</sup> Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
^b The OOO Solar Wind, Krasnodar 350000

Abstract: The effect of the deposition temperature of AlO$_x$ in the range 330–530$^\circ$C by spray pyrolysis on the rear-surface parameters of silicon $(n^+pp^+)$Cz-Si/AlO$_x$ solar cells has been studied. It is found that, as the temperature of AlO$_x$ deposition is increased, all parameters of the rear surfaces decrease; e. g., the photocurrent density decreases from 25. 4 to 24. 1 mA/cm$^2$; the photovoltage decreases from 611 to 598 mV; and the efficiency decreases from 12. 2 to 10. 9%. This indicates that passivation of the $p^+$-type surface with AlO$_x$ films becomes less effective. It is concluded that, as the temperature of AlO$_x$ deposition is increased, the value of the positive charge incorporated into the nonstoichiometric interphase SiO$_x$ layer formed between c-Si and AlO$_x$ in the course of AlO$_x$ deposition, which brings about screening of the negative charge localized at the AlO$_x$–SiO$_x$ interface and, respectively, a decrease in the field-induced passivation, increases.

Received: 21.11.2011
Accepted: 28.11.2011

 English version: Semiconductors, 2012, 46:6, 832–837

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