This article is cited in 2 papers

Semiconductor physics

Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

E. I. Rau^ab, N. A. Orlikovsky^c, E. S. Ivanova<sup>a

a</sup> Lomonosov Moscow State University
^b Institute of Microelectronics Technology and High-Purity Materials RAS
^c Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow

Abstract: A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1–50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

Received: 16.11.2011
Accepted: 28.11.2011

 English version: Semiconductors, 2012, 46:6, 810–813

Bibliographic databases:

•