This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Photosensitive Ox/GaAs heterojunctions: Creation and properties

V. Yu. Rud'^a, Yu. V. Rud'^b, E. I. Terukov^b, T. N. Ushakova<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg

Abstract: A method for the thermal oxidation of GaAs crystals in air is suggested and the first photosensitive Ox/$n$-GaAs heterojunctions, where Ox is a native oxide, are fabricated. The steady current-voltage characteristics and spectra of relative quantum efficiency of the new structures are studied. The features of the spectra of photoactive absorption of the obtained heterojunctions are discussed. The potential of using vacuumfree thermal oxidation of the GaAs crystals in air to fabricate broadband heterophotoconverters of optical radiation on their basis is established.

Received: 22.11.2011
Accepted: 28.11.2011

 English version: Semiconductors, 2012, 46:6, 783–785

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