This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Creation and studies of the photosensitivity of Ox/$n$-GaP structures

V. Yu. Rud'^a, Yu. V. Rud'^b, E. I. Terukov^b, T. N. Ushakova<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg, 194021 Санкт-Петербург

Abstract: Photosensitive heterostructures Ox/$n$-GaP, where Ox is a native oxide, are created for the first time by thermal interaction of a GaP crystal with ambient air. The photovoltaic effect of the heterostructures, which dominates upon illumination of the structure’s oxide film, is revealed. First, the spectral dependences of the relative quantum efficiency of photoconversion for the obtained heterostructures are analyzed, the character of the band-to-band transitions is determined, and the GaP band gap is estimated. A conclusion is drawn regarding the potential of using the vacuum-free thermal oxidation of homogeneous $n$-GaP single crystals in ambient air to fabricate broadband photoconverters of optical radiation.

Received: 22.11.2011
Accepted: 28.11.2011

 English version: Semiconductors, 2012, 46:6, 779–782

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