This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Optical transitions in Cd$_x$Hg$_{1-x}$Te-based quantum wells and their analysis with account for the actual band structure of the material

N. L. Bazhenov, A. V. Shilyaev, K. J. Mynbaev, G. G. Zegrya

Ioffe Institute, St. Petersburg

Abstract: Quantum-confinement levels in a Cd$_x$Hg$_{1-x}$Te-based rectangular quantum well are calculated in the framework of the four-band Kane model taking into account mixing between the states of electrons and three types of holes (heavy, light, and spin-split holes). Comparison of the calculation results with experimental data on the photoluminescence of Cd$_x$Hg$_{1-x}$Te-based quantum wells suggests that optical transitions involving the conduction and light-hole bands are possibly observed in the spectra.

Received: 16.11.2011
Accepted: 17.11.2011

 English version: Semiconductors, 2012, 46:6, 773–778

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