Abstract:
The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity ($\rho_{\mathrm{d.r.}}\approx$ 10$^4$–10$^8$$\Omega$ cm at 77 K) and of the doping level ($N$ = 10$^{-5}$, 10$^{-4}$, 10$^{-3}$, 10$^{-2}$, and 10$^{-1}$ at%). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample $E\le$ 10$^2$ V/cm is observed in undoped high-resistivity GaSe crystals ($\rho_{\mathrm{d.r.}}\ge$ 10$^4$$\Omega$ cm) and in lightly doped GaSe crystals ($N\le$ 10$^{-2}$ at%) in the region of $T\le$ 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection.
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