P. V. Seredin, A. V. Glotov, È. P. Domashevskaya, A. S. Len'shin, M. S. Smirnov, I. N. Arsent'ev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov, “Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 6,Pages 739

This article is cited in 18 papers

Electronic properties of semiconductors

Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys

P. V. Seredin^a, A. V. Glotov^a, È. P. Domashevskaya^a, A. S. Len'shin^a, M. S. Smirnov^a, I. N. Arsent'ev^b, D. A. Vinokurov^b, A. L. Stankevich^b, I. S. Tarasov^b

^a Voronezh State University
^b Ioffe Institute, St. Petersburg

Abstract: The study is concerned with MOCVD epitaxial heterostructures grown on the basis of Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$ quinary alloys in the region of alloy compositions isoperiodic to GaAs. By the X-ray diffraction technique and atomic force microscopy, it is shown that, on the surface of the heterostructures, there are nanometric objects capable of lining up along a certain direction. From calculations of the crystal lattice parameters with consideration for internal strains, it can be inferred that the new compound is a phase based on the Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$ alloy.

Received: 23.11.2011
Accepted: 28.11.2011