This article is cited in 8 papers

Electronic properties of semiconductors

Optical transitions in MnGa$_2$Se$_4$

B. H. Tagiev, T. G. Kerimova, O. B. Tagiyev, S. G. Asadullayeva, I. A. Mamedova

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The dependence of the absorption coefficient on incident photon energy in a MnGa$_2$Se$_4$ single crystal has been investigated in the temperature range 110–295 K. Using group-theory analysis of the electron state symmetry and comparison of the symmetry of the energy spectrum of MnGa$_2$Se$_4$ and its isoelectronic analogs, a conclusion about the character of optical transitions has been drawn. It is shown that the features observed at 2.31 and 2.45 eV are related to the intracenter transitions $^6A_1^1\to^4T_2(^4G)$ and $^6A_1^2\to^4T_2(^4G)$. The $^6A_1$ state is split by the crystal field.

Received: 08.11.2011
Accepted: 21.11.2011

 English version: Semiconductors, 2012, 46:6, 705–707

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