N. D. Il'inskaya, A. L. Zakhgeim, S. A. Karandashov, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, A. E. Chernyakov, “Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 5,Pages 708

This article is cited in 4 papers

Semiconductor physics

Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C

N. D. Il'inskaya^a, A. L. Zakhgeim^b, S. A. Karandashov^a, B. A. Matveev^a, V. I. Ratushnyi^c, M. A. Remennyi^a, A. Yu. Rybalchenko^c, N. M. Stus^a, A. E. Chernyakov^b

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c South-Russian State Polytechnic University named M. I. Platov

Abstract: The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for current crowding near the anode, using experimental data on the intensity distribution of positive and negative luminescence over the surface of the diodes. The effect of temperature on the efficiency of photogenerated carrier collection in the diodes and also the effect of the anode configuration on the current sensitivity and detectivity of the diodes are discussed.

Received: 14.11.2011
Accepted: 21.11.2011