RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2012 Volume 46, Issue 5, Pages 691–694 (Mi phts8244)

This article is cited in 1 paper

Semiconductor physics

Nonlinear thermal model of a heterojunction-based light-emitting diode

V. A. Sergeev, A. M. Hodakov

Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences

Abstract: A mathematical nonlinear thermal model of a heterojunction-based light-emitting diode (LED) is considered; the model makes it possible to estimate the nonuniformity of the current and temperature distributions in the active region of the heterostructure with the LED efficiency and the temperature dependence of the thermal-conductivity coefficient in the structure taken into account. A numerical-analytical iteration method is used to solve a set of equations that includes solving a nonlinear time-independent equation of thermal conductivity with the density of electrical power converted to heat dependent on the LED efficiency and an equation of electrothermal feedback, under conditions of a constant value for the average current density over the active region of the structure. The results of theoretical and experimental studies into the dependence of the $p$$n$ junction-to-case thermal resistance on the forward current are represented for high-power light-emitting diodes.

Received: 28.04.2011
Accepted: 17.10.2011


 English version:
Semiconductors, 2012, 46:5, 673–677

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026