This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Luminescence of CdMnTe/CdMgTe structures with periodically arranged narrow-gap inclusions

V. F. Agekyan^a, G. Karczewski^b, A. Yu. Serov^a, N. G. Filosofov<sup>a

a</sup> V. A. Fock Institute of Physics, Saint-Petersburg State University
^b Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland

Abstract: The study is concerned with the excitonic and intracenter emission spectra of planar structures with periodically arranged Cd$_{0.9}$Mn$_{0.1}$Te layers (with a nominal thickness corresponding to one monolayer) separated by Cd$_{0.5}$Mg$_{0.5}$Te barriers with different thicknesses. The complex structure of the spectra and their variations in the temperature range from 5 to 80 K are indicative of the inhomogeneity of the Cd$_{0.9}$Mn$_{0.1}$Te layers, the important role of vertical diffusion, and the correlation between irregularities in the direction of growth at a small spacing between the narrow-gap Cd$_{0.9}$Mn$_{0.1}$Te layers. A substantial factor controlling the spectrum and quantum efficiency of excitonic emission is the relation between the exciton radius and the period of the structure.

Received: 25.10.2011
Accepted: 31.10.2011

 English version: Semiconductors, 2012, 46:5, 637–640

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