This article is cited in 10 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Transport properties of InGaAs/GaAs Heterostructures with $\delta$-doped quantum wells

N. V. Baidus^a, V. V. Vainberg^b, B. N. Zvonkov^a, A. S. Pilipchuk^b, V. N. Poroshin^b, O. G. Sarbeĭ<sup>b

a</sup> Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute of Physics, National Academy of Sciences of Ukraine, Kiev

Abstract: The lateral transport of electrons in single- and double-well pseudomorphic GaAs/$n$-InGaAs/GaAs heterostructures with quantum wells 50–100 meV deep and impurity $\delta$-layers in the wells, with concentrations in the range 10$^{11}<N_s<10^{12}$ cm$^{-2}$, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Received: 18.10.2011
Accepted: 31.10.2011

 English version: Semiconductors, 2012, 46:5, 631–636

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