This article is cited in 2 papers

Surface, interfaces, thin films

Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage

D. I. Tetelbaum, S. V. Tikhov, E. V. Kuril'chik, Yu. A. Mendeleva

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: It is established that the Schottky-barrier photovoltage decreases as a result of the irradiation of a silicon sample with a barrier by light (incident on the base side). The value of the photovoltage is restored approximately 0.5 h after irradiation. The changes in the photovoltage after irradiation are compared to the behavior of the silicon microhardness and interpreted on the basis of the concept of point defect generation in the long-range effect.

Received: 15.11.2011
Accepted: 21.11.2011

 English version: Semiconductors, 2012, 46:5, 622–624

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