This article is cited in 2 papers

Electronic properties of semiconductors

Formation and annealing of radiation defects in tin-doped $p$-type germanium crystals

V. V. Litvinov^a, A. N. Petukh^a, Yu. M. Pokotilo^a, V. P. Markevich^b, S. B. Lastovsky<sup>b

a</sup> Belarusian State University, Minsk
^b Scientific-Practical Materials Research Centre of NAS of Belarus

Abstract: The effect of tin on the formation and annealing of radiation defects in $p$-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes SnV with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30–75$^\circ$C. Annealing of irradiated crystals at temperatures in the range 110–150$^\circ$C brings about the formation of deep-level centers with a donor level at $E_v$ + 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.

Received: 01.11.2011
Accepted: 07.11.2011

 English version: Semiconductors, 2012, 46:5, 611–614

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