This article is cited in 16 papers

Electronic properties of semiconductors

Thermal expansion of CuIn$_5$S$_8$ single crystals and the temperature dependence of their band gap

I. V. Bondar'

Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: Single crystals of the CuIn$_5$S$_8$ ternary compound are grown by planar crystallization of the melt (the vertical Bridgman method). The composition and structure of the crystals are established. The specific expansion is measured by the dilatometric technique, and the coefficients of thermal expansion are calculated. From the data, the Debye temperatures $(\Theta_{\mathrm{D}})$ and the root-mean-square dynamic displacements of atoms $(\sqrt{\bar u^2})$ in the CuIn$_5$S$_8$ compound are calculated. From the transmittance spectra recorded in the region of the fundamental absorption edge in the temperature range 20 to 300 K, the band gap is determined and its temperature dependence is constructed.

Received: 04.10.2011
Accepted: 31.10.2011

 English version: Semiconductors, 2012, 46:5, 602–605

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