This article is cited in 5 papers

Electronic properties of semiconductors

Effect of charged dislocation walls on mobility in GaN epitaxial layers

S. E. Krasavin

Joint Institute for Nuclear Research, Dubna, Moscow region

Abstract: A theoretical model in the context of a conventional representation on traditional notion concerning Read cylinders for interpretation of mobility collapse as a function of the concentration of free carriers in GaN-based films is suggested. Along with phonon and impurity scattering mechanisms, electron scattering due to charged dislocations embedded into the walls is taken into account in the model. An expression is obtained for the height of the drift barrier depending on the concentration of free carriers. Based on the derived equations, the dependence of the location of the mobility minimum on the dislocation structure is interpreted.

Received: 28.09.2011
Accepted: 20.10.2011

 English version: Semiconductors, 2012, 46:5, 598–601

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