This article is cited in 4 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Phase transitions in thin Ge$_2$Sb$_2$Te$_5$ chalcogenide films according to Raman spectroscopy data

A. P. Avachev^a, S. P. Vikhrov^a, N. V. Vishnyakov^a, S. A. Kozyukhin^b, K. V. Mitrofanov^a, E. I. Terukov<sup>c

a</sup> Ryazan State Radio Engineering University
^b Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
^c Ioffe Institute, St. Petersburg

Abstract: Data on the Raman spectra of thin Ge$_2$Sb$_2$Te$_5$ chalcogenide semiconductor films are reported. The study is performed with the purpose of determining the temperatures of phase transitions initiated by laser radiation.

Received: 18.10.2011
Accepted: 31.10.2011

 English version: Semiconductors, 2012, 46:5, 591–594

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