This article is cited in 3 papers

Semiconductor physics

Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower $\delta$-doped supplied layers

Jung-Hui Tsai^a, Sheng-Shiun Ye^a, Der-Feng Guo^b, Wen-Shiung Lour<sup>c

a</sup> Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 824, Taiwan
^b Department of Electronic Engineering, Air Force Academy, Kaohsiung, Sisou 1, Jieshou W. Rd., Gangshan Dist., Kaohsiung City 820, Taiwan
^c Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202, Taiwan

Abstract: Influence corresponding to the position of $\delta$-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower $\delta$-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper $\delta$-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower $\delta$-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain–to–source voltage in the two devices, which is investigated in this article.

Received: 01.09.2011
Accepted: 23.09.2011

Language: English

 English version: Semiconductors, 2012, 46:4, 514–518

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