This article is cited in 10 papers

Amorphous, glassy, organic semiconductors

Photoinduced etching of thin films of chalcogenide glassy semiconductors

V. A. Dan'ko, I. Z. Indutnii, V. I. Mynko, P. E. Shepeliavyi, O. V. Bereznyova, O. S. Litvin

Institute of Semiconductor Physics NAS, Kiev

Abstract: Photoinduced enhancement of the solubility of annealed films made of chalcogenide glassy semiconductors (ChGSs) in amine-based selective etchants has been observed. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. It is demonstrated that the new photoinduced effect enables a photolithographic process (including interference lithography) to occur on ChGS layers, annealed at a temperature close to the glass-transition temperature of a chalcogenide glass by simultaneous illumination and selective etching of layers of this kind. A possible mechanism for the photoinduced etching of ChGSs is discussed.

Received: 18.08.2011
Accepted: 12.09.2011

 English version: Semiconductors, 2012, 46:4, 504–508

Bibliographic databases:

•