This article is cited in 2 papers

Surface, interfaces, thin films

Features of electron mobility in a thin silicon layer in an insulator–silicon–insulator structure

A. V. Leonov, A. D. Mokrushin, N. M. Omelyanovskaya

Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in $\gamma$-ray irradiation conditions. It is shown that, in the temperature range 400 to $\sim$100 K, electron mobility increases in accordance with the mechanism of electron scattering at an acoustic phonon, while, with a subsequent decrease in temperature to the temperature of liquid helium, mobility drops because the Coulomb scattering of electrons at charged surface centers starts to dominate. It is demonstrated that as a result of $\gamma$-ray irradiation, electron mobility decreases and the degree of this decrease strongly depends on the electrical mode of the sensor during irradiation.

Received: 03.10.2011
Accepted: 10.10.2011

 English version: Semiconductors, 2012, 46:4, 478–483

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