E. A. Lavrukhina, D. V. Khomitsky, “The control of charge and spin density localization in a double quantum dot at the edge of the topological insulator as the physical background of the qubit operations”, Fizika i Tekhnika Poluprovodnikov, 2025, Volume 59, Issue 6,Pages <nobr>343

XXIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2025

The control of charge and spin density localization in a double quantum dot at the edge of the topological insulator as the physical background of the qubit operations

E. A. Lavrukhina^a, D. V. Khomitsky^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Department of Physics, University of Nizhny Novgorod

Abstract: The methods of control of the spatial localization and spin polarization are studied for the model of double quantum dot at the edge of topological insulator based on HgTe/CdTe quantum well and formed by three magnetic barriers. The transitions in the spectrum induced by the resonance electric field are found for which the initial and final states correspond to the different spatial localization or to the specific sign of the chosen spin projection. Based on these transitions, the possibility of the information encoding is demonstrated for modeling of the coupled charged and spin qubits and for some of the qubit operations including the single-qubit NOT, Z and two-qubit CNOT.

Received: 23.06.2025
Revised: 14.08.2025
Accepted: 14.08.2025

DOI: 10.61011/FTP.2025.06.61570.7732