XXIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2025

Modeling of Landau levels, Hall and longitudinal resistance in the topological Anderson insulator based on HgTe/Hg$_{0.3}$Cd$_{0.7}$Te quantum well

D. V. Khomitsky^a, E. A. Lavrukhina^b, A. V. Telezhnikov^a, M. S. Zholudev<sup>c

a</sup> Department of Physics, University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The Landau levels, the conditions of the Hall resistance quantization and the behavior of the longitudinal resistance of the edge states in the magnetic field are studied for the HgTe/Hg$_{0.3}$Cd$_{0.7}$Te quantum well with (013) orientation and 14.1 nm width, corresponding to the semi-metallic spectrum and near the charge neutrality point. Based on recent experiments for such structure with a disorder in the phase of a topological Anderson insulator and applying the localization theory for the edge states in a magnetic field, the modeling of the observation threshold of the Hall conductance plateau is performed, as well as of the dependence of the longitudinal resistance of the edge states, at different temperature. The modeling results are in a good agreement with the experimental data.

Received: 23.06.2025
Revised: 14.08.2025
Accepted: 14.08.2025

DOI: 10.61011/FTP.2025.06.61569.7731