International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

High operating temperature photodiodes based on $n$-InAsSbP/InAs/$p$-InAsSbP heterostructures

A. A. Klimov, R. È. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi

Ioffe Institute, St. Petersburg

Abstract: The results of development and research of photodiodes based on $n$-InAs/$n$-InAsSbP/InAs/$p$-InAsSbP heterostructure in the temperature range of 125–500 K are presented. The design features of the epitaxial structure and photodetector chip are discussed, which provided values of current sensitivity and detectability of $S_i$ = 1.6 A/W and $D^*$ = 1.5 $\cdot$ 10$^{10}$ cm $\cdot$ Hz$^{1/2}$ $\cdot$ W$^{-1}$ at room temperature and $S_i >$ 0.1 A/W at $T$ = 500 K.

Received: 05.05.2025
Revised: 24.06.2025
Accepted: 18.09.2025

DOI: 10.61011/FTP.2025.06.61568.8070