Abstract:
A study of various pairs of À$^{\mathrm{III}}$Â$^{\mathrm{V}}$ materials with an increased aluminum content in the photoactive layers of wide-bandgap subcells to form the structures of (Al)GaInP/(Al)GaAs//Si hybrid solar cells have been carried out. Calculations of the spectral characteristics of the external quantum efficiency of (Al)GaInP/(Al)GaAs//Si solar cells have been made in order to ensure the matching of photogenerated currents of the subcells. Predictive estimates were obtained for the efficiency of solar cells based on the proposed structures that ensure the efficient operation of devices when converting spevtra: space (AM0, 1 sun) – GaInP$_2$/Al$_{0.1}$Ga$_{0.9}$As//Si (33.5%) and (Al$_{0.17}$Ga$_{0.83}$)InP$_2$/Al$_{0.1}$Ga$_{0.9}$As//Si (34.9%); terres- trial (AM1.5D, 236 suns) – GaInP$_2$/Al$_{0.08}$Ga$_{0.92}$As//Si ($\sim$43.1%) and (Al$_{0.14}$Ga$_{0.86}$)InP$_2$/Al$_{0.08}$Ga$_{0.92}$As//Si ($\sim$44.1%).
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