Abstract:
The effect of $\gamma$-ray radiation on the electrical properties of heat-treated Tb$_{0.01}$Sn$_{0.99}$Se (sample 1) and Tb$_{0.05}$Sn$_{0.95}$Se (sample 2) samples is studied. It is found that, as a result of irradiation with $\gamma$-ray 1.25-MeV photons, the charge-carrier concentration decreases in the temperature range $T$ = 77–200 K by 17 and 6.3% for samples 1 and 2, respectively. It is assumed that, in the course of irradiation with $\gamma$-ray photons, terbium impurity atoms are located between sites of the crystal lattice; in addition, Frenkel defects are formed.
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