I. P. Smirnova, L. K. Markov, A. S. Pavluchenko, M. V. Kukushkin, “AlGaInN-based light emitting diodes with a transparent <nobr>$p$</nobr>-contact based on thin ITO films”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 3,Pages <nobr>384

This article is cited in 6 papers

Semiconductor physics

AlGaInN-based light emitting diodes with a transparent $p$-contact based on thin ITO films

I. P. Smirnova^a, L. K. Markov^a, A. S. Pavluchenko^a, M. V. Kukushkin^b

^a Ioffe Institute, St. Petersburg
^b ZAO Innovation Company "TETIS", St. Petersburg, 194156, Russia

Abstract: A method for obtaining transparent conductive ITO (indium-tin oxide) films aimed for use in light emitting diodes of the blue spectral range is developed. The peak external quantum efficiency of light-emitting diodes with a $p$-contact based on the obtained films reaches 25%, while for similar light-emitting diodes with a standard semitransparent metal contact, it is $<$ 10%. An observed increase in the direct voltage drop from 3.15 to 3.37 V does not significantly affect the possibility of applying these films in light-emitting diodes since the optical power of light-emitting diodes with a transparent $p$-contact based on ITO films exceeds that of chips with metal semitransparent $p$-contacts with a working current of 20 mA by a factor of almost 2.5. Light-emitting diodes with $p$-contacts based on ITO films successfully withstand a pumping current that exceeds their calculated working current by a factor of 5 without the appearance of any signs of degradation.

Received: 25.07.2011
Accepted: 01.08.2011