A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko, V. N. Sheremet, A. O. Vinogradov, “Temperature dependence of contact resistance for Au–Ti–Pd$_2$Si–n$^+$–Si ohmic contacts subjected to microwave irradiation”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 3,Pages 344

This article is cited in 7 papers

Surface, interfaces, thin films

Temperature dependence of contact resistance for Au–Ti–Pd$_2$Si–n$^+$–Si ohmic contacts subjected to microwave irradiation

A. E. Belyaev^a, N. S. Boltovets^b, R. V. Konakova^a, Ya. Ya. Kudryk^a, A. V. Sachenko^a, V. N. Sheremet^a, A. O. Vinogradov^a

^a Institute of Semiconductor Physics NAS, Kiev
^b Orion State Research Institute, Kyiv

Abstract: Based on a theoretical analysis of the temperature dependence of the contact resistance $R_c$ for an Au–Ti–Pd$_2$Si–n$^+$–Si ohmic contact, a current-transfer mechanism explaining the experimentally observed increase in $R_c$ in the temperature range 100–380 K is proposed. It is shown that microwave treatment of such contacts results in a decrease in the spread of $R_c$ over the wafer and a decrease in the value of $R_c$ whilst retaining an increase in $R_c$ in the temperatures range 100–380 K.

Received: 22.08.2011
Accepted: 29.08.2011