Electronic properties of semiconductors

Specific features of recombination in layered $a$-Si:H films

I. A. Kurova, N. N. Ormont

Lomonosov Moscow State University, Faculty of Physics

Abstract: The absorbed light spectral composition determines the type of carrier generation: interband generation or mixed generation that also includes the generation of electrons from levels of the valence-band tail. The generation type affects the value and temperature dependence of the electron recombination rate in $a$-Si:H layered films. This effect is caused by a variation in the occupation of the levels of silicon dangling bonds and the valence band tail with electrons upon a change in the carrier generation type. As a result, in the case of mixed carrier generation in the investigated films with a low concentration of native dangling bonds, electron recombination in the films is slow and recombination at the levels of the valence-band tail can prevail up to room temperature.

Received: 04.08.2011
Accepted: 16.08.2011

 English version: Semiconductors, 2012, 46:3, 315–318

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