This article is cited in 11 papers

Electronic properties of semiconductors

The effect of irradiation with electrons on the electrical parameters of Hg$_3$In$_2$Te$_6$

O. G. Grushka^a, V. T. Maslyuk^b, S. M. Chupyra^a, O. M. Myslyuk^a, S. V. Bilichuk^a, I. I. Zabolotskiy<sup>a

a</sup> Chernivtsi National University named after Yuriy Fedkovych
^b Institute of Electron Physics, National Academy of Sciences of Ukraine

Abstract: The results of studying the electrical properties of Hg$_3$In$_2$Te$_6$ crystals irradiated with electrons with the energy $E_e$ = 18 MeV and the dose $D$ = 4 $\times$ 10$^{16}$ cm$^{-2}$ are reported. It is shown that, irrespective of the charge-carrier concentration in the initial material, the Hg$_3$In$_2$Te$_6$ samples acquire the charge-carrier concentration (1.6–1.8) $\times$ 10$^{13}$ cm$^{-3}$ after irradiation. The phenomenon of Fermi level pinning in an irradiated material is discussed. The initial charge-carrier concentration, which remains virtually unchanged after irradiation and which ensures the high radiation resistance of Hg$_3$In$_2$Te$_6$ crystals, corresponds to a compensated material, similar to an intrinsic semiconductor at $T >$ 260 K.

Received: 04.08.2011
Accepted: 16.08.2011

 English version: Semiconductors, 2012, 46:3, 312–314

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