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Fizika i Tekhnika Poluprovodnikov, 2012 Volume 46, Issue 2, Pages 231–234 (Mi phts8154)

This article is cited in 12 papers

Semiconductor physics

Photosensitivity of ZnO/CdS/Cu(In,Ga)Se$_2$/Mo thin-film solar cells fabricated on various substrates

V. Yu. Rud'a, Yu. V. Rud'b, V. F. Gremenokc, E. I. Terukovb, B. H. Bairamovb, Y. W. Songd

a St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
c Scientific-Practical Materials Research Centre of NAS of Belarus
d Korea Polytechnic University, 2121, Jungwang-dong, Siheung-city, Gyeonggi-do, 429-793, Korea

Abstract: The results of measuring the first spectra of relative quantum efficiency for photoconversion in thin-film ZnO/CdS/Cu(In,Ga)Se$_2$/Mo solar cells fabricated on rigid (glass) and flexible (polyimide) substrates are reported. The character of interband transitions has been studied and the values of the band gap for direct and indirect transitions in thin Cu(In,Ga)Se$_2$ films are determined. It is found that a shift of the maximal photosensitivity for the obtained solar cells to shorter wavelengths is observed as rigid substrates are replaced by flexible ones. It is concluded that thin-film Cu(In,Ga)Se$_2$ structures can be used as broad-band photoconverters of solar radiation.

Received: 29.06.2011
Accepted: 11.07.2011


 English version:
Semiconductors, 2012, 46:2, 221–224

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