Semiconductor physics

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple $\delta$-doped sheets

Kuei-Yi Chu^a, Meng-Hsueh Chiang^b, Shiou-Ying Cheng^b, Wen-Chau Liu<sup>a

a</sup> Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, 70101, Republic of China
^b Department of Electronic Engineering, National II an University, I-Lan, Taiwan, Republic of China

Abstract: Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple $\delta$-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple $\delta$-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple $\delta$-doped counterpart. The DCPHEMT with graded triple $\delta$-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Received: 21.03.2011
Accepted: 28.06.2011

Language: English

 English version: Semiconductors, 2012, 46:2, 203–207

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