This article is cited in 12 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

G. È. Cirlin^abc, M. Tchernycheva^d, G. Patriarche^e, J.-C. Harmand<sup>e

a</sup> Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^d Institut d’Electronique Fondamentale UMR 8622 CNRS, Universite Paris-Sud, 91405 Orsay Cedex, France
^e LPN CNRS, 91460 Marcoussis, France

Abstract: The effect of the postgrowth annealing of InP/InAsP/InP heterostructural nanowires produced by molecular-beam epitaxy on their structural and optical properties is studied. It is shown that the procedure of short-term (1 min) annealing in an argon atmosphere provides a means for increasing the emission intensity of InAsP quantum dots, suppressing the emission from InAsP quantum wells formed as a result of lateral growth, and substantially reducing the density of structural defects in the nanowires.

Received: 04.07.2011
Accepted: 11.07.2011

 English version: Semiconductors, 2012, 46:2, 175–178

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