This article is cited in 5 papers

Spectroscopy, interaction with radiation

Generation of terahertz radiation by a surface ballistic photocurrent in semiconductors under subpicosecond laser excitation

P. A. Ziaziulia^a, V. L. Malevich^b, I. S. Manak^a, A. Krotkus<sup>c

a</sup> Belarusian State University, Minsk
^b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^c Center for Physical Sciences and Technology, LT-01108, Vilnius, Lithuania

Abstract: An analytical model describing the onset of a surface ballistic photocurrent in cubic semiconductors under femtosecond laser excitation is proposed. It is shown that the contribution of the photocurrent component parallel to the surface to the generation of terahertz pulses may be comparable to the contribution of the perpendicular component. Consideration of the cubic symmetry of a semiconductor leads to the azimuthal anisotropy of terahertz generation.

Received: 20.06.2011
Accepted: 10.08.2011

 English version: Semiconductors, 2012, 46:2, 143–148

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